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Preliminary Data
SIPMOS Small-Signal-Transistor Features * Dual N channel
*
BSO 307N
Product Summary
Drain source voltage Drain-Source on-state resistance Continuous drain current
VDS RDS(on) ID
30 0.05 5
V A
Enhancement mode
* Avalanche rated * Logic Level * dv/dt rated
Type BSO 307 N
Parameter Continuous drain current, one channel active
Package SO 8
Symbol
Ordering Code Q67000-S4012
Value 5 20 55 5 0.2 6 mJ A mJ kV/s Unit A
Maximum Ratings, at T j = 25 C, unless otherwise specified
ID IDpulse EAS IAR EAR
dv/dt
T A = 25 C
Pulsed drain current, one channel active
T A = 25 C
Avalanche energy, single pulse
I D = 5 A, VDD = 25 V, R GS = 25
Avalanche current,periodic limited by T jmax Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt
I S = 5 A, V DS = 24 V, di/dt = 200 A/s, T jmax = 150 C
Gate source voltage Power dissipation, one channel active
VGS Ptot Tj Tstg
20 2 -55...+150 -55 ... +150 55/150/56
V W C
T A = 25 C
Operating temperature Storage temperature IEC climatic category; DIN IEC 68-1
Data Sheet
1
05.99
BSO 307N
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point Thermal resistance @ 10 sec., min. footprint Thermal resistance @ 10 sec., 6 cm2 cooling area 1) Symbol min. Values typ. max. 35 100 62.5 K/W Unit
RthJS Rth(JA) Rth(JA)
-
Electrical Characteristics, at T j = 25 C, unless otherwise specified Symbol Values Parameter min. Static Characteristics Drain- source breakdown voltage typ. 1.6 max. 2
Unit
V(BR)DSS VGS(th) IDSS
30 1.2
V
VGS = 0 V, I D = 0.25 mA, T j = 25 C
Gate threshold voltage, VGS = VDS I D = 20 A Zero gate voltage drain current
A 0.1 10 10 1 100 100 nA 0.05 0.035 0.075 0.05
VDS = 30 V, V GS = 0 V, T j = 25 C VDS = 30 V, V GS = 0 V, T j = 150 C
Gate-source leakage current
IGSS RDS(on)
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 4.5 V, I D = 4.1 A VGS = 10 V, I D = 5 A
1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air.
Data Sheet
2
05.99
BSO 307N
Electrical Characteristics Parameter Characteristics Transconductance Symbol min. Values typ. 6 400 160 70 22 max. 500 200 90 33 ns S pF Unit
gfs Ciss Coss Crss td(on)
2 -
VDS2*I D*RDS(on)max , ID = 4.1 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 15 V, V GS = 4.5 V, ID = 4.1 A, RG = 16
Rise time
tr
-
22
33
ns
VDD = 15 V, V GS = 4.5 V, ID = 4.1 A, RG = 16
Turn-off delay time
td(off)
-
22
33
ns
VDD = 15 V, V GS = 4.5 V, ID = 4.1 A, RG = 16
Fall time
tf
-
25
38
ns
VDD = 15 V, V GS = 4.5 V, ID = 4.1 A, RG = 16
Data Sheet
3
05.99
BSO 307N
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values at Tj = 25 C, unless otherwise specified Dynamic Characteristics Gate charge at threshold min. typ. 0.4 8 13 3.2 max. 0.6 12 20 -
Unit
QG(th) Qg(5) Qg V(plateau)
-
nC
VDD = 15 V, ID = 0.1 A, VGS = 0 to 1 V
Gate charge at Vgs=5V VDD = 15 V, ID = 4.1 A, VGS = 0 to 5 V Gate charge total
nC V
VDD = 15 V, ID = 4.1 A, VGS = 0 to 10 V
Gate plateau voltage
VDD = 15 V, ID = 4.1 A
Reverse Diode Inverse diode continuous forward current
IS I SM VSD t rr Q rr
-
0.85 25 20
5 20 1.4 38 30
A
TA = 25 C
Inverse diode direct current,pulsed
TA = 25 C
Inverse diode forward voltage V ns C
VGS = 0 V, I F = 10 A
Reverse recovery time
VR = 15 V, IF=IS , diF/dt = 100 A/s
Reverse recovery charge
VR = 15 V, IF=l S , diF/dt = 100 A/s
Data Sheet
4
05.99
BSO 307N
Power dissipation
Drain current
Ptot= f (TA)
BSO 307 N
ID = f (TA )
BSO 307 N
2.4
W
5.5
A
2.0 1.8
4.5 4.0 3.5 3.0 2.5 2.0
Ptot
1.6 1.4 1.2 1.0 0.8
ID
0.6 0.4 0.2 0.0 0 20 40 60 80 100 120
C
1.5 1.0 0.5 0.0 0 20 40 60 80 100 120
C
160
160
TA
TA
Safe operating area
Transient thermal impedance
ID = f ( V DS )
parameter : D = 0 , TA = 25 C
10
A
2 BSO 307 N
ZthJA = f(tp )
parameter : D= tp/T
10 2
/ID =
BSO 307 N
V
DS
tp = 6.0s
10 s
K/W
10 1
RD
S(
on
)
1 ms
10 0
10 ms
Z thJA
100 s
10 1
ID
D = 0.50 0.20 10
0
0.10 single pulse 0.05 0.02 0.01
10 -1 DC
10 -2 -1 10
10
0
10
1
V
10
2
10 -1 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10
s
10
4
VDS
tp
Data Sheet
5
05.99
BSO 307N
Typ. output characteristics
Drain-source on-resistance
I D = f (VDS)
parameter: tp = 80 s
BSO 307 N
RDS(on) = f (Tj)
parameter : I D = 4.1 A, VGS = 4.5 V
BSO 307 N
12
A
Ptot = 2W
l k if h jge d
VGS [V] a 2.5
b c 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 8.0 10.0
0.18
0.14
10 9 8
RDS(on)
d e
0.12 0.10
ID
7
c
f g h
6 5 4 3 2 1
b
98%
0.08 0.06 0.04 0.02
i j k l
typ
0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
a
V
5.0
0.00 -60
-20
20
60
100
C
180
VDS
Tj
Typ. capacitances C = f (VDS) parameter: V GS = 0 V, f = 1 MHz
10 3
pF
Ciss
C
Coss
10 2
Crss
10 1 0
5
10
15
20
25
30
V VDS
40
Data Sheet
6
05.99
BSO 307N
Typ. transfer characteristics I D= f (VGS) parameter: tp = 80 s VDS 2 x I D x RDS(on) max
12
A
Gate threshold voltage
VGS(th) = f (Tj)
parameter : VGS = VDS , ID = 20 A
3.2
V
10 9 8 2.4
VGS(th)
ID
2.0
7 6 5
1.6
max
1.2 4 3 2 0.4 1 0 1.8 2.0 2.2 2.5 2.8 3.0 3.2 3.5
V
0.8
typ
min
4.0
0.0 -60
-20
20
60
100
V
160
VGS
Tj
Forward characteristics of reverse diode
I F = f (VSD)
parameter: Tj , tp = 80 s
10 2
BSO 307 N
A
10 1
IF
10 0
Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%)
10 -1 0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
VSD
Data Sheet
7
05.99
BSO 307N
Avalanche Energy EAS = f (Tj) parameter: ID = 5 A, VDD = 25 V RGS = 25
60
Typ. gate charge
VGS = f (Q Gate)
parameter: ID puls = 4.1 A
BSO 307 N
16
V
mJ
12
VGS
EAS
40
10
30
8 0,2 VDS max 0,8 VDS max
6 20 4 10 2
0 20
40
60
80
100
120
C
160
0 0
2
4
6
8
10
12
14
16 nC 19
Drain-source breakdown voltage
Tj
Q Gate
V(BR)DSS = f (Tj)
BSO 307 N
37
V
35
V(BR)DSS
34 33 32 31 30 29 28 27 0
20
40
60
80
100
120
C
160
Tj
Data Sheet
8
05.99

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